6 f o 1 e g a p 0 0 . 2 . v e r 0 0 2 0 j e 5 0 0 0 s d 9 0 r m a y 2 0 , 2011 the mark shows majo r re vised points. the re vised point s can be ea sily search ed b y co pyi ng an "" in th e pdf file and sp ecifying it in the " f ind what:" field. preliminary data sheet ne5820m53 p-channel mos field effect transistor for impedance converter of microphone des cript ion t h e n e 5 8 2 0 m 5 3 i s a p-c h annel s ilico n mosfet d es ign e d for u se as i m p e d an ce conv erter for m i crophon e. the pac k age i s a 3 - p i n t h i n - t y p e l ead - l ess m i n i m o l d , suitab l e f o r h i g h - d e n s ity surface m ounting. fea t ure s ? l o w noi s e : n v = ? 114 dbv t y p. @ v d d = 2. 0 v , c in = 3 p f , r l = 15 k ? low in put capacitan ce : c iss = 1. 5 pf typ . @ v dd = 2 . 0 v, r l = 1 5 k ? l o w c ons u m p tion c u rre n t : i dd = 85 a t yp. @ v dd = 2.0 v, r l = 15 k ? high-de n sity surface m ounting : 3-pin thin-type lead-less m i n i m o ld (1. 2 1 . 0 0 . 3 3 m m ) ? b u ilt-in t h e cap acito r f o r rf n o ise imm u n i t y ? h igh esd v o ltag e applications ? m i crophone , s en s or et c. ordering information pa rt number orde r numbe r pack a g e qua n tity ma rk ing supply i ng for m ne58 20m5 3 - t 1 ne58 20m5 3 - t 1-a 3-pin t h in-t ype lead- less min i mold (pb-f ree) 10 kp cs/reel b8 ? embosse d ta p e 8 mm w i de ? p i n 3 f a ce t h e p e r f o r ati o n side o f the tape rema r k t o order evalu a tion sam p les, pleas e contact y o ur n e arb y s a les o ffice. part number fo r sample ord e r: ne582 0m53 ca utio n observe p r e c aution s wh en handlin g be cause these d evi ce s are se nsitive to electrostati c disch arg e. r09 d s0 005e j02 00 rev.2.00 may 20, 2011 a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ne5820m53 r09ds0005ej0200 rev.2.00 page 2 of 6 may 20, 2011 absolute maximum ratings (t a = +25 c, unless otherwise specified) parameter symbol ratings unit input voltage (in-gnd) v in ? 0.8 to +0.8 v input current (in-gnd) i in 0.5 ma output voltage (out-gnd) v out ? 0.5 to +6 v output current (out-gnd) i out 17 ma channel temperature t ch 130 c operating ambient temperature t a ? 40 to +95 c storage temperature t stg ? 65 to +150 c recommended operating range (t a = +25 c) parameter symbol min. typ. max. unit supply voltage note v dd 1.0 2.0 10.0 v note: r l = 15 k electrical characteristics (t a = +25 c, r l = 15 k , unless otherwise specified) parameter symbol test conditi ons min. typ. max. unit consumption current i dd v dd = 2 v, v in = 0 v 60 85 105 a input capacitance c iss v dd = 2 v, f = 1 mhz ? 1.5 ? pf voltage gain g v v dd = 2 v, v in = 10 mvrms, c in = 3 pf, f = 1 khz, see test circuit ? 4.5 ? 3.0 ? db reduced voltage characteristics g vv v dd = 2 1.5 v, v in = 10 mvrms, c in = 3 pf, f = 1 khz, see test circuit ? 0.3 ? db frequency characteristics g vf v dd = 2 v, v in = 10 mvrms, c in = 3 pf, f = 1 khz 110 hz, see test circuit ? 0.05 ? db output noise voltage n v v dd = 2 v, v in = 0 vrms, c in = 3 pf, a-curve, see test circuit ? ? 114 ? dbv total harmonic distortion thd v dd = 2 v, v out = 30 mvrms, c in = 3 pf, f = 1 khz, see test circuit ? 0.1 ? % test circuit voltage gain, frequency characteristics, output noise voltage, total harmonic distortion 33 f + 15 k v in 3 pf v dd v out a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne5820m53 r09ds0005ej0200 rev.2.00 page 3 of 6 may 20, 2011 typical characteristics (t a = +25 c, unless otherwise specified) 0 ?2 ?4 ?6 ?8 40 60 120 v dd = 2 v c in = 3 pf r l = 15 k v in = 10 mvrms f = 1 khz 100 consumption current i dd ( a) voltage gain g v (db) voltage gain vs. consumption current 80 100 10 1 0.1 0.01 0.001 10 1 000 v dd = 2 v c in = 3 pf r l = 15 k f = 1 khz 100 total harmonic distortion thd (%) output voltage v out (mvrms) total harmonic distortion vs. output voltage voltage gain g v (db) frequency f (hz) voltage gain vs. frequency 0 ?2 ?4 ?6 ?8 1 10 100 000 v dd = 2 v c in = 3 pf r l = 15 k v in = 10 mvrms 100 1 000 10 000 ?90 ?100 ?110 ?120 02 10 c in = 3 pf r l = 15 k v in = 0 vrms 468 1 9 357 output noise voltage n v (dbv) supply voltage v dd (v) output noise voltage vs. supply voltage 0 ?2 ?4 ?6 ?8 02 10 c in = 3 pf r l = 15 k v in = 10 mvrms f = 1 khz 468 1 9 357 voltage gain g v (db) supply voltage v dd (v) voltage gain vs. supply voltage 600 200 300 400 500 0 410 r l = 15 k 100 0 8 26 39 7 15 consumption current i dd ( a) supply voltage v dd (v) vs. supply voltage consumption current remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne5820m53 r09ds0005ej0200 rev.2.00 page 4 of 6 may 20, 2011 voltage gain g v (db) input capacitance c in (pf) voltage gain vs. input capacitance v dd = 2 v r l = 15 k v in = 10 mvrms f = 1 khz 0 ?2 ?4 ?6 ?8 012345 6 output noise voltage n v (dbv) input capacitance c in (pf) output noise voltage vs. input capacitance v dd = 2 v r l = 15 k v in = 0 vrms ?90 ?100 ?110 ?120 012345 6 remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne5820m53 r09ds0005ej0200 rev.2.00 page 5 of 6 may 20, 2011 package dimensions 3-pin thin-type lead-less minimold (unit: mm) pin connections 1. out 2. in 3. gnd 0.11 +0.1 ?0.05 max. 0.33 0.30 +0.1 ?0.05 (0.8) 0.15 +0.1 ?0.05 0.15 +0.1 ?0.05 1.20.05 1.00.1 1.20.1 2 1 3 (0.8) (0.2) (0.2) (bottom view) b8 remark ( ): reference value a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne5820m53 r09ds0005ej0200 rev.2.00 page 6 of 6 may 20, 2011 recommended soldering conditions this product should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than those recommended below, contact your nearby sales office. soldering method soldering conditions condition symbol infrared reflow peak temperature (package surface temperature) : 260 c or below time at peak temperature : 10 seconds or less time at temperature of 220 c or higher : 60 seconds or less preheating time at 120 to 180 c : 120 30 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin flux (% mass) : 0.2%(wt.) or below ir260 wave soldering peak temperature (molten solder temperature) : 260 c or below time at peak temperature : 10 seconds or less preheating temperature (package surface temperature) : 120 c or below maximum number of flow processes : 1 time maximum chlorine content of rosin flux (% mass) : 0.2%(wt.) or below ws260 partial heating peak temperature (terminal temperature) : 350 c or below soldering time (per side of device) : 3 seconds or less maximum chlorine content of rosin flux (% mass) : 0.2%(wt.) or below hs350 caution do not use different soldering methods together (except for partial heating). a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history ne5820m53 data sheet description rev. date page summary 1.00 jul 9, 2010 ? first edition issued 2.00 may 20, 2011 p. 2 absolute maximum ratings : operating ambient temperature ? 40 to +85 ? 40 to +95 p. 2 recommended operating range : supply voltage min. 1.5 1.0, max. 5.0 10.0 p. 3 typical characteristics : modification of consumption current vs. supply voltage, voltage gain vs. supply voltage, output noise voltage vs. supply voltage
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